Photoluminsence and Optical Features of Hydrogented Silicon Nitride Thin Films
نویسندگان
چکیده
In this work we report room-temperature photoluminescence from as-deposited hydrogenated silicon nitride films due to silicon nanocrystals/structural disorder. A systematic study of fabrication parameters and post-heat treatment on the optical features has been done. Enhancement in optical constant on annealing is attributed to phase separation into c-Si and other phases.
منابع مشابه
Preparation and Characterization of Aluminum Nitride Thin Films with the Potential Application in Electro-Acoustic Devices
In this work, aluminum nitride (AlN) thin films with different thicknesses were deposited on quartz and silicon substrates using single ion beam sputtering technique. The physical and chemical properties of prepared films were investigated by different characterization technique. X-ray diffraction (XRD) spectra revealed that all of the deposited films have an amorphous str...
متن کاملEffect of Thickness on Structural and Morphological Properties of AlN Films Prepared Using Single Ion Beam Sputtering
Aluminum nitride (AlN) thin films have potential applications in microelectronic and optoelectronic devices. In this study, AlN thin films with different thicknesses were deposited on silicon substrate by single ion beam sputtering method. The X-ray diffraction (XRD) spectra revealed that the structure of films with thickness of - nm was amorphous, while the polycrystalline hexagonal AlN with a...
متن کاملEffect of growth time on ZnO thin films prepared by low temperature chemical bath deposition on PS substrate
ZnO thin films were successfully synthesized on a porous silicon (PS) substrate by chemical bathdeposition method. X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM),and photoluminescence (PL) analyses were carried out to investigate the effect of growth duration(3, 4, 5, and 6 h) on the optical and structural properties of the aligned ZnO nanorods. T...
متن کاملSynthesis of Boron-Aluminum Nitride Thin Film by Chemical Vapour Deposition Using Gas Bubbler
Boron included aluminium nitride (B-AlN) thin films were synthesized on silicon (Si) substrates through chemical vapour deposition ( CVD ) at 773 K (500 °C). tert-buthylamine (tBuNH2) solution was used as nitrogen source and delivered through gas bubbler. B-AlN thin films were prepared on Si-100 substrates by varying gas mixture ratio of three precursors. The structural properties of the films ...
متن کاملOptical properties and photoconductivity of amorphous silicon carbon nitride thin film and its application for UV detection
Optical properties of amorphous silicon carbon nitride thin films as a function of carbon content have been studied by the spectral microreflectometry. The compositions of a-SiCN thin films deposited with different CH4 flow rates were analyzed by X-ray photoemission spectroscopy (XPS). It was found that the transmittance of a-SiCN thin films decreases with the increasing carbon content; the ind...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2009